Structure And Formation Of Semiconductor Interfaces


Structure And Formation Of Semiconductor Interfaces
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Structure And Formation Of Semiconductor Interfaces


Structure And Formation Of Semiconductor Interfaces
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Author : Martin Lohmeier
language : en
Publisher:
Release Date : 1995

Structure And Formation Of Semiconductor Interfaces written by Martin Lohmeier and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with categories.




Semiconductor Interfaces Formation And Properties


Semiconductor Interfaces Formation And Properties
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Author : Guy LeLay
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Semiconductor Interfaces Formation And Properties written by Guy LeLay and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.


The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.



Formation Of Semiconductor Interfaces


Formation Of Semiconductor Interfaces
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Author : J. Pollman
language : en
Publisher:
Release Date : 1994

Formation Of Semiconductor Interfaces written by J. Pollman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with SCIENCE categories.




Electronic Properties Of Semiconductor Interfaces


Electronic Properties Of Semiconductor Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17

Electronic Properties Of Semiconductor Interfaces written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.


Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.



Semiconductor Surfaces And Interfaces


Semiconductor Surfaces And Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09

Semiconductor Surfaces And Interfaces written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Science categories.


This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.



Semiconductor Interfaces And Microstructures


Semiconductor Interfaces And Microstructures
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Author : Zhe Chuan Feng
language : en
Publisher: World Scientific
Release Date : 1992-08-31

Semiconductor Interfaces And Microstructures written by Zhe Chuan Feng and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-08-31 with Science categories.


Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: General, III-V, II-VI and IV-IV, which offer comprehensive information and help readers in following the new developments in the research frontiers of the above fields. Contents:Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems (W Walukiewicz)Miniband Conduction in Semiconductor Superlattices (A Sibille et al.)Barrier Width Dependence of Optical Properties in Semiconductor Superlattices (J J Song et al.)Radiative Processes in GaAs/AIGaAs Heterostructures (P O Holtz et al.)Type-I-Type-II Transition in GaAs/AIAs Superlattices (G H Li)Photoluminescene Studies of Interface Roughness in GaAs/AIAs Quantum Well Structures (D Gammon et al.)Optical and Magneto-Optical Properties of Narrow InxGa1-xAs-GaAs Quantum Wells (D C Reynolds & K R Evans)Growth and Studies of Antimony Based III-V Compounds by Magnetron Sputter Epitaxy Using Metalorganic and Solid Elemental Sources (J B Webb & R Rousina)Properties of Cd1-xMnxTe Films and Cd1-xMnxTe-CdTe Superlattices Grown by Pulsed Laser Evaporation and Epitaxy (J M Wrobel & J J Dubowski)Zn1-yCdySe1-xTex Quatenary II-VI Wide Bandgap Alloys and Heterostructures (R E Nahory et al.)Intersubband Transitions in SiGe/Si Quantum Structures (R P G Karunasiri et al.)High-Temperature Discrete Devices in 6H-SiC: Sublimation Epitaxial Growth, Device Technology and Electrical Performance (M M Anikin et al.) Readership: Scientists, engineers and graduate students. keywords:



Silicon Surfaces And Formation Of Interfaces Basic Science In The Industrial World


Silicon Surfaces And Formation Of Interfaces Basic Science In The Industrial World
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Author : Jarek Dabrowski
language : en
Publisher: World Scientific
Release Date : 2000-05-25

Silicon Surfaces And Formation Of Interfaces Basic Science In The Industrial World written by Jarek Dabrowski and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-05-25 with Science categories.


Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references are numerous and organized in tables, allowing a search without the need to browse through the text.Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.



Semiconductor Surfaces And Interfaces


Semiconductor Surfaces And Interfaces
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Author : Friedhelm Bechstedt
language : en
Publisher:
Release Date : 1988

Semiconductor Surfaces And Interfaces written by Friedhelm Bechstedt and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Semiconductors categories.




Semiconductor Interfaces Microstructures And Devices


Semiconductor Interfaces Microstructures And Devices
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Author : Zhe Chuan Feng
language : en
Publisher: CRC Press
Release Date : 1993-01-01

Semiconductor Interfaces Microstructures And Devices written by Zhe Chuan Feng and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Science categories.


A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.



Electronic Structure Of Semiconductor Interfaces


Electronic Structure Of Semiconductor Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer
Release Date : 2024-06-10

Electronic Structure Of Semiconductor Interfaces written by Winfried Mönch and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-06-10 with Science categories.


This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.