Study Of High Mobility Ge And Sige Channel Ferroelectric Negative Capacitance Field Effect Transistor And Complementary Field Effect Transistors
DOWNLOAD
Download Study Of High Mobility Ge And Sige Channel Ferroelectric Negative Capacitance Field Effect Transistor And Complementary Field Effect Transistors PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Study Of High Mobility Ge And Sige Channel Ferroelectric Negative Capacitance Field Effect Transistor And Complementary Field Effect Transistors book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Study Of High Mobility Ge And Sige Channel Ferroelectric Negative Capacitance Field Effect Transistor And Complementary Field Effect Transistors
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 2023
Study Of High Mobility Ge And Sige Channel Ferroelectric Negative Capacitance Field Effect Transistor And Complementary Field Effect Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023 with categories.
Tunnel Field Effect Transistors Tfet
DOWNLOAD
Author : Jagadesh Kumar Mamidala
language : en
Publisher: John Wiley & Sons
Release Date : 2016-11-30
Tunnel Field Effect Transistors Tfet written by Jagadesh Kumar Mamidala and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-30 with Technology & Engineering categories.
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Compact Modeling
DOWNLOAD
Author : Gennady Gildenblat
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-06-22
Compact Modeling written by Gennady Gildenblat and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-06-22 with Technology & Engineering categories.
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Strain Effect In Semiconductors
DOWNLOAD
Author : Yongke Sun
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-11-14
Strain Effect In Semiconductors written by Yongke Sun and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-11-14 with Technology & Engineering categories.
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Junctionless Field Effect Transistors
DOWNLOAD
Author : Shubham Sahay
language : en
Publisher: John Wiley & Sons
Release Date : 2019-02-27
Junctionless Field Effect Transistors written by Shubham Sahay and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-02-27 with Technology & Engineering categories.
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Atomic Layer Deposition For Semiconductors
DOWNLOAD
Author : Cheol Seong Hwang
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-18
Atomic Layer Deposition For Semiconductors written by Cheol Seong Hwang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-18 with Science categories.
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Polarization Effects In Semiconductors
DOWNLOAD
Author : Debdeep Jena
language : en
Publisher: Springer Science & Business Media
Release Date : 2008
Polarization Effects In Semiconductors written by Debdeep Jena and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Science categories.
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Finfet Modeling For Ic Simulation And Design
DOWNLOAD
Author : Yogesh Singh Chauhan
language : en
Publisher: Academic Press
Release Date : 2015-03-17
Finfet Modeling For Ic Simulation And Design written by Yogesh Singh Chauhan and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-03-17 with Technology & Engineering categories.
This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: - Why you should use FinFET - The physics and operation of FinFET - Details of the FinFET standard model (BSIM-CMG) - Parameter extraction in BSIM-CMG - FinFET circuit design and simulation - Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts' insight into the specifications of the standard - The first book on the industry-standard FinFET model - BSIM-CMG
Analysis And Design Of Analog Integrated Circuits
DOWNLOAD
Author : Paul R. Gray
language : en
Publisher: John Wiley & Sons
Release Date : 2024-01-04
Analysis And Design Of Analog Integrated Circuits written by Paul R. Gray and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-01-04 with Technology & Engineering categories.
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Authoritative and comprehensive textbook on the fundamentals of analog integrated circuits, with learning aids included throughout Written in an accessible style to ensure complex content can be appreciated by both students and professionals, this Sixth Edition of Analysis and Design of Analog Integrated Circuits is a highly comprehensive textbook on analog design, offering in-depth coverage of the fundamentals of circuits in a single volume. To aid in reader comprehension and retention, supplementary material includes end of chapter problems, plus a Solution Manual for instructors. In addition to the well-established concepts, this Sixth Edition introduces a new super-source follower circuit and its large-signal behavior, frequency response, stability, and noise properties. New material also introduces replica biasing, describes and analyzes two op amps with replica biasing, and provides coverage of weighted zero-value time constants as a method to estimate the location of dominant zeros, pole-zero doublets (including their effect on settling time and three examples of circuits that create doublets), the effect of feedback on pole-zero doublets, and MOS transistor noise performance (including a thorough treatment on thermally induced gate noise). Providing complete coverage of the subject, Analysis and Design of Analog Integrated Circuits serves as a valuable reference for readers from many different types of backgrounds, including senior undergraduates and first-year graduate students in electrical and computer engineering, along with analog integrated-circuit designers.
Finfets And Other Multi Gate Transistors
DOWNLOAD
Author : J.-P. Colinge
language : en
Publisher: Springer Science & Business Media
Release Date : 2008
Finfets And Other Multi Gate Transistors written by J.-P. Colinge and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Technology & Engineering categories.
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.